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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC515 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER ANG CH Collector-base voltage IN Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 300 300 7 0.1 UNIT V V V A W ae ae TC=25ae 6 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC515 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=10|I A; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10|I A; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=50mA; IB=5m A 2.0 V ICBO Collector cut-off current VCB=200V;IE=0 100 nA IEBO Emitter cut-off current VEB=5V; IC=0 100 nA hFE DC current gain IC=50mA ; VCE=10V 30 HAN INC SEM GE OND IC TOR UC 150 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC515 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 |
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